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Width: 3.99 mm
Height: 1.58 mm
Length: 4.98 mm
Technology: Si
Unit Weight: 540 mg
Output Power: 1 W
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Operating Frequency: 900 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 6.4 W
DC Current Gain hFE Max: 100 at 250 mA at 3 V
Gain Bandwidth Product fT: 1000 MHz
Emitter- Base Voltage VEBO: 2.3 V
Operating Temperature Range: - 40 C to + 85 C
Collector- Base Voltage VCBO: 15 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 1.2 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 17 V
