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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Type: Bipolar
Operating Frequency: 30 MHz
Transistor Polarity: NPN
Pd - Power Dissipation: 270 W
Emitter- Base Voltage VEBO: 4 V
Continuous Collector Current: 20 A
Maximum DC Collector Current: 20 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 10
Collector- Emitter Voltage VCEO Max: 35 V
