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Technology: Si
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Operating Frequency: 1.09 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 7 W
Emitter- Base Voltage VEBO: 3.5 V
Continuous Collector Current: 200 mA
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 15
Collector- Emitter Voltage VCEO Max: 20 V
